Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
نویسندگان
چکیده
منابع مشابه
Resistive switching characteristics of MnOx-based ReRAM
The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal–insulator–metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al w...
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Available online 17 September 2012
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2020
ISSN: 2045-2322
DOI: 10.1038/s41598-020-68211-y